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＜電子ブック＞
Semiconductor Equations / by Peter A. Markowich, Christian A. Ringhofer, Christian Schmeiser

版	1st ed. 1990.
出版者	(Vienna : Springer Vienna : Imprint: Springer)
出版年	1990
本文言語	英語
大きさ	X, 248 p : online resource
著者標目	*Markowich, Peter A author Ringhofer, Christian A author Schmeiser, Christian author SpringerLink (Online service)
件　名	LCSH:Mathematical analysis LCSH:Electrodynamics LCSH:Mathematical physics LCSH:Chemometrics LCSH:Computational intelligence LCSH:Electronics FREE:Analysis FREE:Classical Electrodynamics FREE:Theoretical, Mathematical and Computational Physics FREE:Mathematical Applications in Chemistry FREE:Computational Intelligence FREE:Electronics and Microelectronics, Instrumentation
一般注記	1 Kinetic Transport Models for Semiconductors -- 1.1 Introduction -- 1.2 The (Semi-)Classical Liouville Equation -- 1.3 The Boltzmann Equation -- 1.4 The Quantum Liouville Equation -- 1.5 The Quantum Boltzmann Equation -- 1.6 Applications and Extensions -- Problems -- References -- 2 From Kinetic to Fluid Dynamical Models -- 2.1 Introduction -- 2.2 Small Mean Free Path—The Hilbert Expansion -- 2.3 Moment Methods—The Hydrodynamic Model -- 2.4 Heavy Doping Effects—Fermi-Dirac Distributions -- 2.5 High Field Effects—Mobility Models -- 2.6 Recombination-Generation Models -- Problems -- References -- 3 The Drift Diffusion Equations -- 3.1 Introduction -- 3.2 The Stationary Drift Diffusion Equations -- 3.3 Existence and Uniqueness for the Stationary Drift Diffusion Equations -- 3.4 Forward Biased P-N Junctions -- 3.5 Reverse Biased P-N Junctions -- 3.6 Stability and Conditioning for the Stationary Problem -- 3.7 The Transient Problem -- 3.8 The Linearization of the Transient Problem -- 3.9 Existence for the NonlinearProblem -- 3.10 Asymptotic Expansions on the Diffusion Time Scale -- 3.11 Fast Time Scale Expansions -- Problems -- References -- 4 Devices -- 4.1 Introduction -- 4.2 P-N Diode -- 4.3 Bipolar Transistor -- 4.4 PIN-Diode -- 4.5 Thyristor -- 4.6 MIS Diode -- 4.7 MOSFET -- 4.8 Gunn Diode -- Problems -- References -- Physical Constants -- Properties of Si at Room Temperature In recent years the mathematical modeling of charge transport in semi­ conductors has become a thriving area in applied mathematics. The drift diffusion equations, which constitute the most popular model for the simula­ tion of the electrical behavior of semiconductor devices, are by now mathe­ matically quite well understood. As a consequence numerical methods have been developed, which allow for reasonably efficient computer simulations in many cases of practical relevance. Nowadays, research on the drift diffu­ sion model is of a highly specialized nature. It concentrates on the explora­ tion of possibly more efficient discretization methods (e.g. mixed finite elements, streamline diffusion), on the improvement of the performance of nonlinear iteration and linear equation solvers, and on three dimensional applications. The ongoing miniaturization of semiconductor devices has prompted a shift of the focus of the modeling research lately, since the drift diffusion model does not account well for charge transport in ultra integrated devices. Extensions of the drift diffusion model (so called hydrodynamic models) are under investigation for the modeling of hot electron effects in submicron MOS-transistors, and supercomputer technology has made it possible to employ kinetic models (semiclassical Boltzmann-Poisson and Wigner­ Poisson equations) for the simulation of certain highly integrated devices HTTP:URL=https://doi.org/10.1007/978-3-7091-6961-2

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